| PART |
Description |
Maker |
| K524G2GACB-A050 |
4Gb NAND Flash 2Gb Mobile DDR
|
Samsung semiconductor
|
| TS1GMP630 TS2GMP630 TS4GMP630 |
1GB/2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| STN8810BDS12HPBE STN8810S12 |
STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM
|
STMicroelectronics
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TS4GMP850 TS8GMP850 |
4GB/8GB USB Flash Drive
|
Transcend Information. Inc.
|
| CY7C68023-56LTXC |
EZ-USB NX2LP USB 2.0 NAND Flash Controller 3.3 V NAND Flash Operation
|
Cypress Semiconductor
|
| KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KBE00S009M-D411 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
Samsung Electronic
|
| KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG2256M72ASSR265JD3XG |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL 4GB 2x256Mx72 ECC的DDR SDRAM的注册，瓦特/锁相
|
Bourns, Inc.
|
